Product Description

0.2 mm2 detector area, according to EN298 standard (flame detecton), TO5 housing with concentrating lens (11 mm2 virtual detector area)
Properties of the SG01M–5LENS UV photodiode
Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
Radiation sensitive area A = 11,0 mm2
TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10_W/cm2 peak radiation results a current of approx. 140 nA

About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coefficient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit in gallery).

Options
SiC photodiodes are available with seven different active chip areas from 0,06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5,5 mm diameter TO18 housing or a 9,2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).